Infineon IPD5N25S3-430: High-Performance 250V N-Channel Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD5N25S3-430 stands out as a high-performance N-Channel Power MOSFET engineered to meet these demanding requirements. Designed with a 250V drain-source voltage (VDS) rating, this MOSFET is an ideal choice for a wide array of applications, including switch-mode power supplies (SMPS), motor control, and industrial power systems.

A key strength of the IPD5N25S3-430 lies in its exceptionally low on-state resistance (RDS(on)) of just 43 mΩ maximum. This low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. By operating cooler, the device enhances overall system reliability and can often lead to simpler thermal management solutions, saving both space and cost.

The MOSFET is built using Infineon's advanced proprietary technology, which optimizes the trade-off between switching speed and losses. It features fast switching characteristics, making it suitable for high-frequency circuits. This allows for the design of smaller magnetic components and filters in power supplies, contributing to more compact and lightweight end products.

Furthermore, the device is housed in a TO-252 (DPAK) package, a industry-standard that offers a robust physical structure and excellent power dissipation capabilities. This package is renowned for its good thermal performance and is well-suited for automated assembly processes, ensuring manufacturing efficiency.

Robustness is another critical design focus. The IPD5N25S3-430 offers a high avalanche ruggedness, providing enhanced durability against voltage spikes and transients that are common in harsh electrical environments. This intrinsic robustness ensures a longer operational lifespan and greater system stability.

ICGOOODFIND: The Infineon IPD5N25S3-430 is a superior 250V N-Channel MOSFET that delivers a powerful combination of high efficiency, proven reliability, and excellent thermal performance, making it an outstanding component for modern power conversion systems.

Keywords: Power MOSFET, Low RDS(on), 250V Rating, Fast Switching, High Efficiency.