Infineon IPN70R2K0P7S: A High-Performance 700V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and power density are paramount. The Infineon IPN70R2K0P7S stands out as a premier solution, embodying the advanced CoolMOS™ P7 technology to meet these demanding requirements. This 700V superjunction MOSFET is engineered to deliver exceptional performance in a wide array of applications, from switched-mode power supplies (SMPS) and lighting to industrial motor drives and consumer electronics.

A key highlight of the IPN70R2K0P7S is its ultra-low effective dynamic drain-source resistance (R DS(eff)) . This characteristic is crucial for minimizing conduction losses during operation. When a MOSFET is in its on-state, a lower R DS(on) translates directly into reduced power dissipation as heat, thereby enhancing overall system efficiency. The P7 technology achieves a remarkable balance between low switching losses and superior conductivity, a feat that allows designers to push the boundaries of power density.

Furthermore, the device boasts an outstanding figure-of-merit (FoM) , which is a critical metric for evaluating the performance of power transistors. By optimizing the trade-off between gate charge (Q G ) and R DS(on) , the IPN70R2K0P7S enables faster switching frequencies. This allows for the use of smaller passive components, such as inductors and capacitors, leading to more compact and lightweight power supply designs without sacrificing performance or robustness.

The 700V voltage rating provides a significant safety margin and enhanced robustness against voltage spikes and transients commonly encountered in real-world applications like power factor correction (PFC) stages. This inherent resilience ensures higher system reliability and longevity, reducing the risk of field failures. The technology also features low electromagnetic interference (EMI), simplifying the task of meeting stringent global compliance standards.

Designed with sustainability in mind, the CoolMOS™ P7 series contributes to higher energy efficiency across its operational range. This is increasingly important for complying with international energy efficiency regulations (like ErP and 80 PLUS) and for reducing the carbon footprint of electronic equipment. Its high-performance capabilities make it an ideal choice for high-power adapters, server and telecom power systems, and high-intensity discharge (HID) lighting.

ICGOODFIND: The Infineon IPN70R2K0P7S represents a significant leap in power transistor technology, offering designers a potent combination of ultra-low losses, high switching speed, and robust 700V capability. It is a cornerstone component for building next-generation, high-efficiency, and high-power-density systems.

Keywords: CoolMOS™ P7, Ultra-low R DS(on) , High Switching Frequency, 700V Robustness, Power Density.